5962-9061703MRA

Description

High-speed, 1048576-bit dynamic random access memories (DRAMs), organized as 262 144 words of four bits each. These devices employ technology for high performance, reliability, and low power. These devices feature maximum RAS access times of 80 ns, 100 ns,120 ns, and 150 ns. Maximum power dissipation is as low as 305 mW operating and 16.5 mW standby on 150-ns devices.